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APTC60AM18SC
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 18mW max @ Tj = 25C ID = 143A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * *
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
* *
G1 S1 VBUS 0/VBUS OUT
*
Benefits
S2 G2
* * * *
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 143 107 572 30 18 833 20 1 1800 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APTC60AM18SC - Rev 1 May, 2004
APTC60AM18SC
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1000A VGS = 0V,VDS = 600V Tj = 25C VGS = 0V,VDS = 600V Tj = 125C VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = 20 V, VDS = 0V Min 600 Typ Max 100 1000 18 3.9 200 Unit V A mW V nA
2.1
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 143A Inductive switching @ 125C VGS = 15V VBus = 400V ID = 143A RG = 1.2W Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2 Min Typ 28 10.2 0.85 1036 116 444 21 30 283 84 1608 3920 2630 4824 J ns nC Max Unit nF
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s IF = 120A VR = 133V di/dt = 400A/s Min Tc = 85C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V
APTC60AM18SC - Rev 1 May, 2004
Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTC60AM18SC
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions
50% duty cycle
Min Tc = 125C Tj = 25C Tj = 175C
IF = 80A
Typ 80 1.6 2.0 112 520 400
Max 1.8 2.4
Unit A V nC pF
IF = 80A, VR = 300V di/dt =2000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.15 0.46 0.35 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-7
APTC60AM18SC - Rev 1 May, 2004
APTC60AM18SC
Typical CoolMOS Performance Curve
0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.5 0.3 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 800 700 ID, Drain Current (A) 600 500 400 300 200 100 0 0 5V 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 240 ID, Drain Current (A) ID, DC Drain Current (A)
Normalized to VGS=10V @ 71.5A
Transfert Characteristics 540
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
6.5V 6V 5.5V
ID, Drain Current (A)
VGS=15&10V
450 360 270 180 90 0
TJ=125C TJ=25C 0 TJ=-55C 7
25
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150
APTC60AM18SC - Rev 1 May, 2004
VGS=10V
VGS=20V
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APTC60AM18SC
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A)
limited by RDSon
ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 143A
100 s
100 1 ms 10 Single pulse DC line TJ=150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 10 ms
VGS, Gate to Source Voltage (V)
14 12 10 8 6 4 2 0 0 200 400 600 800 Gate Charge (nC) 1000 1200 ID=143A TJ=25C
VDS=120V VDS=300V VDS=480V
1000 Crss 100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
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APTC60AM18SC - Rev 1 May, 2004
APTC60AM18SC
350 300
td(on) and td(off) (ns) Delay Times vs Current 120 Rise and Fall times vs Current
VDS=400V RG=1.2 TJ=125C L=100H
td(off)
VDS=400V RG=1.2 TJ=125C L=100H
100 tr and tf (ns) 80 60 40 20
250 200 150 100 50 0 0 40 80 120 160 200 240
ID, Drain Current (A) Switching Energy vs Current 10 9 8 7 6 5 4 3 2 1 0 0
VDS=400V RG=1.2 TJ=125C L=100H
tf
tr
td(on)
0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Gate Resistance 20 Switching Energy (mJ)
VDS=400V ID=143A TJ=125C L=100H
Switching Energy (mJ)
Eoff
15
Eoff
10 Eon
Eon
5
0 40 80 120 160 200 ID, Drain Current (A) 240 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150C 100
Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 30 50 70 90 110 ID, Drain Current (A) 130
VDS=400V D=50% RG=1.2 TJ=125C
IDR, Reverse Drain Current (A)
140
TJ=25C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
APTC60AM18SC - Rev 1 May, 2004
APT website - http://www.advancedpower.com
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APTC60AM18SC
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9
0 0.00001
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 1600 IR Reverse Current (A) 1400 1200 1000 800 600 400 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25C TJ=125C TJ=75C TJ=175C
160
IF Forward Current (A)
TJ=25C
TJ=75C
120 80 40 0 0 0.5
TJ=175C
TJ=125C
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
3000 C, Capacitance (pF) 2500 2000 1500 1000 500 0 1 10 100 VR Reverse Voltage 1000
APTC60AM18SC - Rev 1 May, 2004
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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